isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4421
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: ...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4421
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
·Wide Area of Safe Operation
·High Speed Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation @Ta=25℃
PC Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
1.2
A
2 W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
2SC4421
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
10
hFE-2
DC Current...