BF459

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF458; BF459 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 06 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 100 mA) High voltage (max. 300 V). handbook, halfpage BF458; BF459 APPLICATIONS Intended for video output stages in black-and-white and in colour television receivers. DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. 1 2 3 Top view 2 3 1 MAM254 PINNING PIN 1 2 3 emitter collector, connected to mounting base base Fig.1 Simplified outline (TO-126; SOT32) and symbol. DESCRIPTION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF458 BF459 VCEO collector-emitter voltage BF458 BF459 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 90 °C open collector open base − − − − − − − −65 − −65 250 300 5 100 300 100 6 +150 150 +150 V V V mA mA mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 250 300 V V MIN. MAX. UNIT 1999 Apr 21 2 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base BF458...