BF421

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF421/D High Voltage Transistors PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER BF421 BF423 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD BF421 –300 –300 –5.0 –500 625 5.0 1.5 12 – 55 to +150 BF423 –250 –250 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 14 TO–92 (TO–226AA) PD TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) Emitter Cutoff Current (VEB = –5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO BF421 BF423 V(BR)CBO BF421 BF423 V(BR)EBO BF421 BF423 ICBO BF421 BF423 IEBO BF421 BF423 — — –100 — — — –0.01 — nAdc –5.0 –5.0 — — –300 –250 — — Vdc –300 –250 — — Vdc Vdc mAdc v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diod...