BF410A

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D). PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate BF410A to D handbook, halfpage 2 1 3 g MAM257 d s Fig.1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 75 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance VDS = 10 V; VGS = 0; f = 1 kHz Feedback capacitance VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA Noise figure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA F F typ. typ. 1.5 − 1.5 − − 1.5 − dB 1.5 dB Crs Crs typ. typ. 0.5 − 0.5 − − 0.5 − pF 0.5 pF  yfs  min. 2.5 4 6 7 mS IDSS min. max. 0.7 3.0 2.5 7.0 6 12 10 mA 18 mA Ptot max. BF410A B 300 C D mW VDS ID max. max. 20 30 V mA Decem...