BF246C

DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors FEATURES Interchangeability of drain and source connections High IDSS range Frequency up to 450 MHz. APPLICATIONS VHF and UHF amplifiers Mixers General purpose switching. DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN BF246A; BF246B; BF246C; BF247A; BF247B; BF247C SYMBOL DESCRIPTION BF246A; BF246B; BF246C 1 2 3 d g s drain gate source BF247A; BF247B; BF247C 1 2 3 d s g drain source gate handbook, halfpage 2 1 3 g MAM257 d s Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage gate-source cut-off voltage drain current BF246A; BF247A BF246B; BF247B BF246C; BF247C Ptot yfs Crs Tj total power dissipation forward transfer admittance reverse transfer capacitance operating junction temperature up to Tamb = 50 °C ID = 10 mA; VDS = 15 V; f = 1 kHz ID = 10 mA; VDS = 15 V; f = 1 MHz ID = 10 nA; VDS = 15 V VDS = 15 V...