BC857S

PNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BC856S/U_BC857S BC856S/U BC857S C1 B2 E2 654 TR2 TR1 123 E1 B1 C2 EHA07175 Type BC856S BC856U BC857S Marking Pin Configuration Package 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 3Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1 2011-07-25 BC856S/U_BC857S Maximum Ratings Parameter Collector-emitter voltage BC856S/U BC857S Symbol VCEO Value 65 45 Collector-base voltage BC856S, BC856U BC857S VCBO 80 50 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Total power dissipationTS ≤ 115 °C, BC856S TS ≤ 118 °C, BC856U, BC857U Junction temperatur...