BF245

BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50. 1 TO-92 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VDG VGS IGF PD TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation @TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range Value 30 -30 10 350 2.8 - 55 ~ 150 Units V V mA mW mW/°C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition VDS = 0, IG = 1µA VDS = 15V, ID = 200µA Min. -30 -0.4 -1.6 -3.2 -0.5 -2.2 -3.8 -7.5 -8 -5 Max. Units V V Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VGS Gate-Source BF245A BF245B BF245C VGS(off) IGSS Gate-Source Cut-off Voltage Gate Reverse Current VDS = 15V, ID = 10nA VGS = -20V, VGS = 0 V nA On Characteristics IDSS Zero-Gate Voltage Drain Current BF245A BF245B BF245C On Characteristics Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev....