BF2040W

Silicon N-Channel MOSFET Tetrode For low noise , high gain controlled input stages up to 1GHz Operating voltage 5 V Pb-free (RoHS compliant) package Qualified according AEC Q101 BF2040... ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF2040 SOT143 1=S 2=D 3=G2 4=G1 - - BF2040R SOT143R 1=D 2=S 3=G1 4=G2 - - BF2040W SOT343 1=D 2=S 3=G1 4=G2 - - Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF2040, BF2040R TS ≤ 94 °C, BF2040W Storage temperature Channel temperature Thermal Resistance Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Value 8 40 10 7 200 200 -55 ... 150 150 Parameter Channel - soldering point1) BF2040, BF2040R BF2040W Symbol Rthchs Value ≤ 370 ≤ 280 1For calculation of RthJA please refer to Application Note Thermal Resistance Marking NFs NFs NFs Unit V mA V mW °C Unit K/W 1 2007-06-01 BF2040... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V,...