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BF2030W

Part Number	BF2030W
Manufacturer	Siemens Semiconductor Group
Description	Silicon N-Channel MOSFET Tetrode
Published	Mar 23, 2005
Detailed Description	BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz...
Datasheet	BF2030W PDF File

Overview

BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Q62702-F1774 Pin Configuration 1=D 2=S 3 = G1 4 = G2 Package SOT-343 BF 2030W NEs Maximum Ratings Parameter Drain-source voltage Symbol Value 14 40 10 7 200 -55 .
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+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S = 94 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - s...

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