Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 5V • ...
Description
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled input stages up to 1GHz
Operating voltage 5V Pb-free (RoHS compliant) package1) Qualified according AEC Q101
BF2030...
AGC
RF Input RG1
G2 G1
VGG
GND
Drain
RF Output + DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type
Package
Pin Configuration
BF2030
SOT143 1= S 2=D 3=G2 4=G1 -
-
BF2030R
SOT143R 1= D 2=S 3=G1 4=G2 -
-
BF2030W
SOT343 1= D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Symbol
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF2030, BF2030R TS ≤ 94 °C, BF2030W Storage temperature Channel temperature
VDS ID ±IG1/2SM +VG1SE Ptot
Tstg Tch
1Pb-containing package may be available upon special request
Value 8 40 10 6
200 200 -55 ... 150 150
Marking NDs NDs NDs
Unit V mA
V mW
°C
1 2007-04-20
Thermal Resistance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W
Symbol Rthchs
BF2030...
Value
≤370 ≤280
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S...
Similar Datasheet