BF199

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 07 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES Low current (max. 25 mA) Low voltage (max. 25 V). APPLICATIONS Output stage of a vision IF amplifier. DESCRIPTION NPN medium frequency transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage BF199 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 2 3 3 1 2 MAM258 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 7 mA; VCE = 10 V IC = 5 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 38 − MIN. − − − − − 550 TYP. MAX. 40 25 25 500 − − MHz UNIT V V mA mW 1997 Jul 07 2 Philips Semiconductors Product specification NPN medium frequency transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VBE Cre fT PARAMETER coll...