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2SC3930

GME

NPN Silicon Transistor

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High transition frequency fT.  Optimum fo...


GME

2SC3930

File Download Download 2SC3930 Datasheet


Description
Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High transition frequency fT.  Optimum for RF amplification of Pb Lead-free FM/AM radios.  For high-frequency amplification complementary to 2SA1532. 2SC3930 APPLICATIONS  Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC3930 VB/VC SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 30 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F036 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC3930 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emi...




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