SOT-323 Plastic-Encapsulate Transistors
2SC1623W TRANSISTOR (NPN)
SOT–323
FEATURES z High DC current gain :hFE=200(Ty...
SOT-323 Plastic-Encapsulate
Transistors
2SC1623W
TRANSISTOR (
NPN)
SOT–323
FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA z High voltage:VCEO=50V
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 60 50 5 100 200 150
-55-150
Unit V V V mA
mW ℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CEO IC=1mA,IB=0 V(BR)EBO IE=100μA,IC=0
Collector cut-off current
ICBO VCB=60V,IE=0
Emitter cut-off current
IEBO VEB=5V,IC=0
DC current gain
hFE VCE=6V,IC=1mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA,IB=10mA
Base-emitt...
