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2SB1218A

GME

PNP Silicon Transistor

PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity. ...


GME

2SB1218A

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Description
PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity.  Complements the 2SD1819A. Pb Lead-free APPLICATIONS  For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A BQ/BR/BS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -200 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F034 Rev.A www.gmesemi.com 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SB1218A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO E...




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