Document
1. BASE 2. EMITTER 3. COLLECTOR
Features
High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102
2SA1579
SOT-323 Transistor(PNP)
SOT-323
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature
Value -120 -120
-5 -50 100 150 -55-150
Units V V V mA
mW ℃ ℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Symbol Test conditions V(BR)CBO IC=-50μA,IE=0 V(BR)CEO IC=-1mA,IB=0 V(BR)EBO IE=-50μA,IC=0
ICBO VCB=-100V,IE=0 IEBO VEB=-4V,IC=0 hFE VCE=-6V,IC.