PNP Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.(PC=200mW) Excellent HFE Linearity.
Pb
Lead-fre...
PNP Silicon Epitaxial Planar
Transistor
FEATURES
Power dissipation.(PC=200mW) Excellent HFE Linearity.
Pb
Lead-free
Production specification
2SA1579
APPLICATIONS
General purpose application.
ORDERING INFORMATION
Type No.
Marking
2SA1579
RP/ RR/RS
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-50
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
F031 Rev.A
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Production specification
PNP Silicon Epitaxial Planar
Transistor
2SA1579
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO V(BR)CEO V(BR)EBO
IC=-50μA,...
