S9016

NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 25mA）  Power dissipation.(PC=200mW) APPLICATIONS Pb Lead-free  AM converter, FM/RM amplifier of low noise. Production specification S9016 ORDERING INFORMATION Type No. Marking S9016 Y6 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 20 Units V V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 25 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ C127 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor S9016 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collec...