S9013

NPN Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S9012.  Excellent HFE Linearity.  Power dissipation.(PC=300mW). Pb Lead-free APPLICATIONS  High Collector Current. ORDERING INFORMATION Type No. Marking S9013 J3 Production specification S9013 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 25 5 500 300 -55 to +150 Units V V V mA mW ℃ C082 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor S9013 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CE...