BF1205C

BF1205C Dual N-channel dual gate MOS-FET Rev. 01 — 18 May 2004 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias s Internal switch to save external components s Superior cross-modulation performance during AGC s High forward transfer admittance s High forward transfer admittance to input capacitance ratio. 1.3 Applications s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage x digital and analog television tuners x professional communication equipment. Philips Semiconductors BF1205C Dual N-channel dual gate MOS-FET 1.4 Quick reference data Table 1: Quick reference data Per MOS-FET unless otherwise specified. Symbol Parameter VDS ID Ptot yfs drain-source ...