MMBT5550

NPN General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Ultra-small surface mount package. Pb Lead-free Production specification MMBT5550 APPLICATIONS  High voltage transistors.  General purpose application. ORDERING INFORMATION Type No. Marking MMBT5550 M1F SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal resistance,Junction to ambient Junction and Storage Temperature 160 140 6 600 300 417 -55 to+150 Unit V V V mA mW ℃/W ℃ C117 Rev.A www.gmesemi.com 1 Production specification NPN General Purpose Amplifier MMBT5550 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA IE=0 160 V Collector-emitter b...