MMBT4401

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  Epitaxial planar die construction.  Complementary PNP type available: Pb Lead-free MMBT4403.  Ideal for medium power amplification and switching.  MSL 1 APPLICATIONS  General purpose application, switching application. MMBT4401 SOT-23 ORDERING INFORMATION Type No. Marking MMBT4401 2X Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 600 PC Collector Power Dissipation 350 RθJA Thermal Resistance,Junction to Ambient 357 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃/W ℃ C073 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor MMBT4401 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Tes...