M8550

Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= -800 mA).  Complementary To M8050.  Excellent HFE Linearity. Pb Lead-free APPLICATIONS  High Collector Current. Production specification M8550 ORDERING INFORMATION Type No. Marking M8550 Y21 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -6 IC Collector Current -Continuous -800 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C153 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor M8550 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -25 V...