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M8050

GME
Part Number M8050
Manufacturer GME
Description Silicon Epitaxial Planar Transistor
Published Apr 19, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 800mA).  Compleme...
Datasheet PDF File M8050 PDF File

M8050
M8050


Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.
(IC= 800mA).
 Complementary To M8550.
Pb Lead-free  Excellent HFE Linearity.
 High total power dissipation.
(PC=200mW).
M8050 APPLICATIONS  High Collector Current.
.
ORDERING INFORMATION Type No.
Marking M8050 Y11 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 Units V V VEBO Emitter-Base Voltage 6V IC PC Tj,Tstg Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 800 mA 200 mW -55 to +150 ℃ C152 Rev.
A www.
gmesemi.
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