BF1109

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment. 4 3 BF1109; BF1109R; BF1109WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1109R marking code: NBp. Fig.2 Simplified outline (SOT143R). fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current (DC) total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION ...