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BF1107 Dataheets PDF



Part Number BF1107
Manufacturers NXP
Logo NXP
Description N-channel single gate MOS-FETs
Datasheet BF1107 DatasheetBF1107 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification Supersedes data of 1998 Jun 22 1999 May 14 Philips Semiconductors Product specification N-channel single gate MOS-FETs FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver switching. DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively.

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DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification Supersedes data of 1998 Jun 22 1999 May 14 Philips Semiconductors Product specification N-channel single gate MOS-FETs FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver switching. DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. PINNING DESCRIPTION PIN BF1107 1 2 3 drain source gate drain source gate BF1107W Marking code: W3. Marking code: S3p. 1 handbook, halfpage BF1107; BF1107W 3 2 MSB003 Top view Fig.1 Simplified outline SOT23 (BF1107). handbook, halfpage 3 3 1 2 1 Top view 2 MAM062 Fig.2 Simplified outline SOT323 (BF1107W). QUICK REFERENCE DATA SYMBOL S21(on)2 S21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage VGS = 0; ID = 1 mA ID = 20 µA; VDS = 1 V CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS RS = RL = 50 Ω; f = 50 to 860 MHz MIN. − 30 − − TYP. − − 12 −3 MAX. 2.5 − 20 −4.5 UNIT dB dB Ω V 1999 May 14 2 Philips Semiconductors Product specification N-channel single gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VSD VDG VSG ID Tstg Tj drain-source voltage source-drain voltage drain-gate voltage source-gate voltage drain current storage temperature junction temperature PARAMETER BF1107; BF1107W MIN. − − − − − −65 − 3 3 7 7 MAX. V V V V UNIT 10 +150 150 mA °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of the gate lead. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)GSS VGSoff IDSX IGSS PARAMETER gate-source breakdown voltage gate-source pinch-off voltage drain-source leakage current gate cut-off current CONDITIONS VDS = 0; IGS = 0.1 mA VDS = 1 V; ID = 20 µA VGS = −5 V; VDS = 2 V VGS = −5 V; VDS = 0 MIN. 7 − − − TYP. − −3 − − MAX. − −4.5 10 100 UNIT V V µA nA PARAMETER thermal resistance from junction to soldering point; note 1 VALUE 260 UNIT K/W DYNAMIC CHARACTERISTICS Common gate; Tamb = 25°C. SYMBOL S21(on)2 PARAMETER losses (on-state) CONDITIONS VSG = VDG = 0; RS = RL = 50 Ω; f = 50 to 860 MHz VSG = VDG = 0; RS = RL = 75 Ω; f = 50 to 860 MHz S21(off)2 isolation (off-state) VSG = VDG = 5 V; RS = RL = 50 Ω; f = 50 to 860 MHz VSG = VDG = 5 V; RS = RL = 75 Ω; f = 50 to 860 MHz RDSon Cig Cog drain-source on-resistance input capacitance output capacitance VGS = 0; ID = 1 mA VSG = VDG = 5 V; f = 1 MHz VSG = VDG = 0; f = 1 MHz VSG = VDG = 5 V; f = 1 MHz VSG = VDG = 0; f = 1 MHz 1999 May 14 3 MIN. − − 30 30 − − − − − TYP. − − − − 12 0.9 1.5 0.9 1.5 MAX. 2.5 3.5 − − 20 − 2 − 2 UNIT dB dB dB dB Ω pF pF pF pF Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W handbook, halfpage 2 S 0 MBK831 21(on) (dB) −1 handbook, halfpage 2 S (2) 0 MBK832 21(off) (dB) (1) −20 −2 −3 −40 (2) −4 (1) −5 10 102 f (MHz) 103 −60 10 102 f (MHz) 103 VSG = VDG = 0. (1) RS = RL = 50 Ω. (2) RS = RL = 75 Ω. VSG = VDG = 5 V. (1) RS = RL = 50 Ω. (2) RS = RL = 75 Ω. Fig.3 Losses (on-state) as a function of frequency; typical values. Fig.4 Isolation (off-state) as a function of frequency; typical values. handbook, halfpage RL 0 MBK833 (dB) −5 −10 −15 (1) −20 (2) −25 10 102 f (MHz) 103 VSG = VDG = 0. (1) RS = RL = 50 Ω. (2) RS = RL = 75 Ω. Fig.5 Input and output return losses (on-state) as function of frequency; typical values. 1999 May 14 4 Philips Semiconductors Product specification N-channel single gate MOS-FETs PACKAGE OUTLINES Plastic surface mounted package; 3 leads BF1107; BF1107W SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 May 14 5 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W Plastic surface mounted package; 3 leads SOT323 D B E A X y HE v M A 3 Q A A1 c 1 e1 e bp 2 w M B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp.


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