DISCRETE SEMICONDUCTORS
DATA SHEET
BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs
Product specification Supers...
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs
Product specification Supersedes data of 1997 Dec 01
1997 Dec 02
NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
FEATURES
Short channel
transistor with high forward transfer admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
PINNING
PIN 1 2 3 4
DESCRIPTION source drain gate 2 gate 1
APPLICATIONS
VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment.
DESCRIPTION
Enhancement type N-channel field-effect
transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
handbook, 2 c4olumns
3
1 Top view
2
MSB014
BF1105 marking code: NEp.
Fig.1 Simplified outline (SOT143B).
handbook, 2 co3lumns
4
2 Top view
1
MSB035
BF1105R marking code: NAp.
Fig.2 Simplified outline (SOT143R).
alfpage
3
4
2 Top view
1
MSB842
BF1105WR marking code: NA.
Fig.3 Simplified outline (SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS ID Ptot yfs Cig1-ss Crss F
drain-source voltage drain current total power dissipation forward tr...