DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
MBD128
BF1102 Dual N-channel dual gate MOS-FET
Preliminary specifica...
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
MBD128
BF1102 Dual N-channel dual gate MOS-FET
Preliminary specification 1999 Jul 08
Philips Semiconductors
Preliminary specification
Dual N-channel dual gate MOS-FET
FEATURES Two low noise gain controlled amplifiers in a single package Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads. The source and substrate are interconnected. An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage. Integrated diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
handbook, halfpage
BF1102
PINNING - SOT363 PIN 1 2 3 4 5 6 gate 1 (1) gate 2 (1,2) drain (1) drain (2) source (1,2) gate 1 (2) DESCRIPTION
g2 (1, 2)
6
5
4 g1 (1) AMP1 d (1)
g1 (2) 1 2 3 Marking code: W1.
AMP2
d (2)
s (1, 2)
MBL029
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − − Ts ≤ 102 °C; note 1 ID = 15 mA ID = 15 mA f = 1 MHz f = 800 MHz − − − − − − TYP. − − − 43 2.8 30 − −...