BF1005W

BF1005... Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5V Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1005 BF1005R BF1005W* * on request only Maximum Ratings Parameter Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking MZs MZs MZ Symbol VDS ID ±IG1/2SM +VG1SE Ptot Value 8 25 10 3 200 200 Unit V mA V mW Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1005, BF1005R TS ≤ 94 °C, BF1005W Storage temperature Channel temperature Tstg Tch -55 ... 150 150 °C Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 Feb-18-2004 BF1005... Thermal Resistance Parameter Channel - soldering point 1) BF1005, BF1005R BF1005W Symbol Rthchs ≤ 370 ≤ 280 Value Unit K/W Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 0 , VG2S = 6 V Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current (selfbiased) VDS = 5...