IRF7495

Applications l High frequency DC-DC converters PD - 94683C IRF7495 VDSS 100V HEXFET® Power MOSFET RDS(on) max ID :22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage S G and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor hPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL Junction-to-Drain Lead eRθJA Junction-to-Ambient (PCB Mount) Notes  through † are on page 8 www.irf.com Max. 100 ± 20 7.3 4.6 58 2.5 0.02 7.3 -55 to + 150 Units V...