w w w. c e n t r a l s e m i . c o m
CP305V-BCW66H
NPN - Small Signal Transistor Die
0.8 Amp, 45 Volt
The CP305V-BCW66...
w w w. c e n t r a l s e m i . c o m
CP305V-BCW66H
NPN - Small Signal
Transistor Die
0.8 Amp, 45 Volt
The CP305V-BCW66H is a silicon
NPN small signal
transistor designed for general purpose amplifier and switching applications.
MECHANICAL SPECIFICATIONS:
Die Size
31.1 x 31.1 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Size
5.9 x 11.8 MILS
E B Emitter Bonding Pad Size 6.5 x 13.8 MILS
Top Side Metalization
Al – 13,000Å
Back Side Metalization
Au/As-Au – 9,000Å
Scribe Alley Width
1.96 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
17,534
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=75V
IEBO
VEB=4.0V
BVCBO
IC=10µA
BVCEO
IC=10mA
BVEBO
IE=10µA
VCE(SAT) IC=100mA, IB=10mA
VCE(SAT) IC=500mA, IB...
