BCW61C

BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Power Dissipation TSTG Storage Temperature Refer to KST5086 for graphs Value -32 -32 -5.0 -100 350 -55 ~ 150 Units V V V mA mW °C ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BCW61A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO BVEBO ICES hFE Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D IC= -2mA, IB=0 IE= -1µA, IC=0 VCB= -32V, VBE=0 VCE= -5V, IC= -10µA VCE= -5V, IC= -2mA VCE= -5V, IC= -50mA VC...