Silicon Epitaxial Planar Transistor
FEATURES
Darlington connection for a high Hfe High input impedance
Pb
APPLICA...
Silicon Epitaxial Planar
Transistor
FEATURES
Darlington connection for a high Hfe High input impedance
Pb
APPLICATIONS
General purpose amplifiers.
Production specification
2SD2142
ORDERING INFORMATION
Type No.
Marking
2SD2142
R1M
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
32
VEBO
Emitter-Base Voltage
12
IC Collector Current -Continuous
300
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
C249 Rev.A
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Production specification
Silicon Epitaxial Planar
Transistor
2SD2142
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
40 -
-
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
32 -
-
V
Emitter-base breakdown vo...