Silicon Epitaxial Planar Transistor
FEATURES
Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). Optimal for muting. Power di...
Silicon Epitaxial Planar
Transistor
FEATURES
Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). Optimal for muting. Power dissipation.PD=200mW.
Pb
Lead-free
Production specification
2SD1757
APPLICATIONS
Audio frequency general.
ORDERING INFORMATION
Type No.
Marking
2SD1757
AAQ/AAR/AAS
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
15
VEBO
Emitter-Base Voltage
6.5
IC Collector Current -Continuous
500
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
C156 Rev.A
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Production specification
Silicon Epitaxial Planar
Transistor
2SD1757
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
30
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,...
