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B1457

Toshiba

2SB1457


Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Ta =...



Toshiba

B1457

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