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2SC2411

GME

Silicon Transistor


Description
Production specification Silicon Epitaxial Planar Transistor FEATURES  Power dissipation: PCM=200Mw.  High ICM(MAX.),I CM(MAX.)=0.5mA.  Low VCE(sat)。  Complements the 2SA1036. Pb Lead-free 2SC2411 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC2411 CP/CQ/CR SOT-23 Package Code SOT-23 MAXIMUM R...



GME

2SC2411

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