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2SB624

GME

Silicon Transistor

Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain.hFE: 200TYP (VCE=-1.0V,IC...


GME

2SB624

File Download Download 2SB624 Datasheet


Description
Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)  Complimentary to the 2SD596. Pb Lead-free 2SB624 APPLICATIONS  Audio frequency amplifier.  Switching appilication. ORDERING INFORMATION Type No. Marking 2SB624 BV1/BV2/BV3/BV4/BV5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -25 -5 IC Collector Current -Continuous -700 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C014 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SB624 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -30 V Collector-emitter brea...




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