Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High DC current gain.hFE: 200TYP (VCE=-1.0V,IC...
Production specification
Silicon Epitaxial Planar
Transistor
FEATURES
High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)
Complimentary to the 2SD596.
Pb
Lead-free
2SB624
APPLICATIONS
Audio frequency amplifier. Switching appilication.
ORDERING INFORMATION
Type No.
Marking
2SB624
BV1/BV2/BV3/BV4/BV5
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-30
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage
-25 -5
IC Collector Current -Continuous
-700
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
C014 Rev.A
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Production specification
Silicon Epitaxial Planar
Transistor
2SB624
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-30
V
Collector-emitter brea...