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2SA1162 Dataheets PDF



Part Number 2SA1162
Manufacturers GME
Logo GME
Description Silicon Epitaxial Planar Transistor
Datasheet 2SA1162 Datasheet2SA1162 Datasheet (PDF)

Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Commplementary to 2SC2712.  High voltage and high current.  Low noise. Pb Lead-free 2SA1162 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltag.

  2SA1162   2SA1162


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Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Commplementary to 2SC2712.  High voltage and high current.  Low noise. Pb Lead-free 2SA1162 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 IB Base Current PC Collector Dissipation -30 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C092 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SA1162 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitt.


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