Document
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Excellent hFE linearity. Commplementary to 2SC2712. High voltage and high current. Low noise.
Pb
Lead-free
2SA1162
APPLICATIONS
General purpose application.
ORDERING INFORMATION
Type No.
Marking
2SA1162
SO/SY/SG
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage
-50 -5
IC Collector Current -Continuous
-150
IB Base Current PC Collector Dissipation
-30 150
Tj,Tstg
Junction and Storage Temperature
-55 to +125
Units V V V mA mA mW ℃
C092 Rev.A
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1
Production specification
Silicon Epitaxial Planar Transistor
2SA1162
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitt.