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2SA1036

GME

Silicon Epitaxial Planar Transistor

Production specification Silicon Epitaxial Planar Transistor FEATURES  Large IC.ICMAX. =-500mA. Pb Lead-free  Low...


GME

2SA1036

File Download Download 2SA1036 Datasheet


Description
Production specification Silicon Epitaxial Planar Transistor FEATURES  Large IC.ICMAX. =-500mA. Pb Lead-free  Low VCE(sat). Ideal for low-voltage operation.  Complements the 2SC2411. 2SA1036 APPLICATIONS  Ideal for low-voltage operation. ORDERING INFORMATION Type No. Marking 2SA1036 HP/HQ/HR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -40 -32 -5 -500 200 -55 to +150 Units V V V mA mW ℃ C012 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SA1036 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)C...




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