BDX67 BDX67A BDX67B BDX67C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. ...
BDX67 BDX67A BDX67B BDX67C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER
TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base
transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
16.9
10.9
12.8
PNP complements are: BDX66, BDX66A, BDX66B, BDX66C.
TO3 Package. Case connected to collector.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
BDX BDX BDX BDX 67 67A 67B 67C 60 80 100 120 V 80
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VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc.
Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base voltage (open collector) Collector current Collector current (peak) Base current Total power dissipation at Tmb= 25°C Maximum junction temperature Storage junction temperature Thermal resistance, junction to mounting base.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
100
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120
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140
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V V A A mA W °C °C K/ W
5
5
5
5
16 20 250 150 200 -65 to +200 1.17
7/99
BDX67 BDX67A BDX67B BDX67C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated)
Parameter
ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) hfe VF Collector cut-off current Collector cut-off current Emitter cut-off current D.C. current gain (note 1) Base - emitter voltage (note 1) Collector - emitter saturation voltage Collector capacitance C...