BDX67

BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 PNP complements are: BDX66, BDX66A, BDX66B, BDX66C. TO3 Package. Case connected to collector. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 67 67A 67B 67C 60 80 100 120 V 80 ì ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base voltage (open collector) Collector current Collector current (peak) Base current Total power dissipation at Tmb= 25°C Maximum junction temperature Storage junction temperature Thermal resistance, junction to mounting base. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 100 ï ï ï í 120 ï ï ï 140 ï î V V A A mA W °C °C K/ W 5 5 5 5 16 20 250 150 200 -65 to +200 1.17 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated) Parameter ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) hfe VF Collector cut-off current Collector cut-off current Emitter cut-off current D.C. current gain (note 1) Base - emitter voltage (note 1) Collector - emitter saturation voltage Collector capacitance C...