TC58FVB321

TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES Power supply voltage Block erase architecture VDD = 2.7 V~3.6 V 8 × 8 Kbytes / 63 × 64 Kbytes Operating temperature Boot block architecture Ta = −40°C~85°C TC58FVT321FT/XB: top boot block Organization TC58FVB321FT/XB: bottom boot block 4M × ...