RN1307~RN1309
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1307,RN1308,RN1309
Switching, Inverter Circ...
RN1307~RN1309
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1307,RN1308,RN1309
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Unit: mm
l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2307~RN2309
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2207 RN2208 RN2209
10 22 47
R2 (kΩ)
47 47 22
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN1307 RN1308 RN1309
Symbol VCBO VCEO
VEBO
Ic Pc Tj Tstg
Rating
50 50 6 7 15 100 100 150 −55~150
JEDEC EIAJ TOSHIBA Weight: 0.006g
Unit V V
V
mA mW °C °C
― SC-70 2-2E1A
1 2001-06-07
RN1307~RN1309
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
RN1307
Emitter cut-off current
RN1308
RN1309
...