BDX53/A/B/C — NPN Epitaxial Silicon Transistor
BDX53/A/B/C NPN Epitaxial Silicon Transistor
Applications
• Hammer Drive...
BDX53/A/B/C —
NPN Epitaxial Silicon
Transistor
BDX53/A/B/C
NPN Epitaxial Silicon
Transistor
Applications
Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications
Features
Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
Equivalent Circuit C
1 TO-220 1.Base 2.Collector 3.Emitter
B
R1
R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ
R2 E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BDX53 : BDX53A : BDX53B : BDX53C
VCEO
Collector-Emitter Voltage : BDX53 : BDX53A : BDX53B : BDX53C
VEBO IC ICP IB PC TJ
TSTG
Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature
Value 45 60 80 100
45 60 80 100
5
8
12
0.2
60
150
- 65 to 150
March 2011
Units V V V V V V V V V A A A W °C °C
© 2011 Fairchild Semiconductor Corporation BDX53/A/B/C Rev. B0
1
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