BDX47

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX45; BDX47 PNP Darlington transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification PNP Darlington transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Industrial switching applications such as: – print hammers handbook, halfpage BDX45; BDX47 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION – solenoids – relay and lamp drivers. DESCRIPTION PNP Darlington transistor in a TO-126; SOT32 plastic package. NPN complements: BDX42 and BDX44. 1 2 3 Top view 1 2 3 MAM350 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BDX45 BDX47 VCES collector-emitter voltage BDX45 BDX47 IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tmb ≤ 100 °C IC = −150 mA; VCE = −10 V IC = −500 mA; VCE = −10 V IC = −500 mA; VCE = −5 V; f = 100 MHz VBE = 0 − − − − − 1000 2000 − − − − − − − − 200 −45 −80 −1 1.25 5 − − − MHz V V A W W open emitter − − − − −60 −90 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 Jul 02 2 Philips Semiconductors Product specification PNP Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BDX45 BDX47 VCES c...