BDX36

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX35; BDX36; BDX37 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 5 A) Low voltage (max. 75 V). APPLICATIONS High-current switching in power applications. DESCRIPTION NPN switching transistor in a TO-126; SOT32 plastic package. handbook, halfpage BDX35; BDX36; BDX37 PINNING PIN 1 2 3 emitter collector, connected to the metal part of the mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BDX35 BDX36; BDX37 VCEO collector-emitter voltage BDX35; BDX36 BDX37 IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tmb ≤ 75 °C IC = 0.5 A; VCE = 10 V IC = 0.5 A; VCE = 5 V; f = 100 MHz ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A open base − − − − 45 − − − − − − − 100 350 60 75 5 15 450 − 500 MHz ns V V A W CONDITIONS open emitter − − − − 100 120 V V MIN. TYP. MAX. UNIT 1997 Apr 16 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BDX35 BDX36; BDX37 VCEO collector-emitter voltage BDX35; BDX36 BDX37 VEBO IC ICM IBM Ptot Ts...