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BDX34B

Part Number	BDX34B
Manufacturer	ON Semiconductor
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Published	Mar 23, 2005
Detailed Description	BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed...
Datasheet	BDX34B PDF File

Overview

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications.
Features • High DC Current Gain − hFE = 2500 (typ.
) at IC = 4.
0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • Low Collector−Emitter Saturation Voltage VCE(sat) = 2.
5 Vdc (max) at IC = 3.
0 Adc − BDX33B, 33C/34B, 34C • Monolithic Construction with Build−In Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol VCEO Value 8...

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