TSM2NB60
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 2A, 4.4Ω
FEATURES
● Advanced planar process ● 100% avalanche tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
definition
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
600 V 4.4 ...
