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BDW53B

Power Innovations Limited

NPN Transistor

BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGU...


Power Innovations Limited

BDW53B

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Description
BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D 40 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 4 A Continuous Collector Current Minimum hFE of 750 at 3 V, 1.5 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW53 BDW53A Collector-base voltage (IE = 0) BDW53B BDW53C BDW53D BDW53 BDW53A Collector-emitter voltage (IB = 0) (see Note 1) BDW53B BDW53C BDW53D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of ...




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