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S6307

Part Number	S6307
Manufacturer	ROHM
Description	SiC Schottky Barrier Diode
Published	Apr 1, 2018
Detailed Description	S6307 SiC Schottky Barrier Diode VR 1200V IF 30A*1 QC 82nC Features 1) Shorter recovery time 2) Reduced temperature de...
Datasheet	S6307 PDF File

Overview

S6307 SiC Schottky Barrier Diode VR 1200V IF 30A*1 QC 82nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner Circuit Construction Silicon carbide epitaxial planar type Schottky diode Datasheet Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) VR 1200 Continuous forward current IF 30 Surge nonrepetitive forward current i2t value PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C IFSM *2 ∫i2d*t2 190 140 780 195 109 Junction temperature Tj 175 Range of storage temperature ...

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