BDS18 BDS18SMD BDS19 BDS19SMD
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6
16.5
3.6 Dia. 1 3 .5 1 0 .6
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC PACKAGES
1.0 2 .5 4 BSC 2. 70 BSC
• HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 ) M a x .
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6 (0 .0 3 0 ) m in .
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
APPLICATIONS
• POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
TO220M SMD1 Pin 1 – Base
- TO220 Metal Package - Isolated - SMD1 Ceramic Surface Mount Package Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase £ 75°C Storage Temperature Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
BDS18 –120V –120V
BDS19 –150V –150V
–5V –8A –2A 50W –65 TO 200°C 200°C
4/00
BDS18 BDS18SMD BDS19 BDS19SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
ICBO ICEO IEBO VCEO(sus)* VCE(sat)* VBE(on)* hFE* fT Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Collector - Emitter sustaining voltage (IB = 0) Collector - Emitter saturation voltage Base - Emitter voltage DC Current gain Transition frequency
Test Conditions
BDS18 BDS19 BDS18 BDS19 VEB = –5V BDS18 BDS19 IC = –1A IC = –1A IC = –0.5A IC = –4A IC = –0.5A VCB = –120V VCB = –150V VCE = –60V VCE = –75V
Min.
Typ.
Max.
–20 –20 –0.1 –0.1 –10
Unit
mA
mA
mA
V
–120 IC = –100mA IB = –0.1A VCE = –2V VCE = –2V VCE = –2V VCE = –10V –150 –0.5 –1.0 250 150
V V V
40 15 30
MHz
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS
Parameter
ton ts tf On Time Storage Time Fall Time (td + tr)
Test Conditions
IC = 2A VCC = –80V IB1 = 0.2A IC = 2A VCC = –80V IB1 = –IB2 = 0.2A
Max.
0.5 1.5 0.3
Unit
ms ms ms
THERMAL DATA RTHj-case RTHj-a Thermal resistance junction - case Thermal resistance junction - ambient Max. 2.5°C/W Max. 62.5°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
4/00
BDS18 BDS18SMD BDS19 BDS19SMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
4/00
.